Fabrication of Silicon Nitride Thick Coatings by Reactive RF Plasma Spraying
نویسندگان
چکیده
منابع مشابه
Fabrication of thick silicon nitride blocks for integration of RF devices
Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...
متن کاملFabrication of thick silicon nitride blocks for integration of RF devices - Electronics Letters
Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...
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Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their che...
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plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...
متن کاملFabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications
Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior. Measurement results are presented on RF coplanar waveguides using solid silicon nitride blocks and silico...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2004
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.45.3304